i *-/ u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 buz900 BUZ901 mechanical data dimensions in mm n-channel power mosfet ij.u _o]5 10.90 0.1 ?? 1 '-- -\ 4.0 0.1 8.7 max. 1.50 typ. 11.60 0.3 pin 1 - gate r 4.4 0.2 to-3 pin 2 - drain case - source power mosfets for audio applications features ? high speed switching ? n-channel power mosfet ? semefab designed and diffused ? high voltage (160v & 200v) ? high energy rating ? enhancement mode ? integral protection diode ? p-channel also available as buz905 & buz906 absolute (tcase = 25c vdsx vgss id b(pk) pd tstg tj reuc maximum ratings unless otherwise stated) drain - source voltage gate - source voltage continuous drain current body drain diode total power dissipation @ tcase = 25c storage temperature range maximum operating junction temperature thermal resistance junction - case buz900 160v BUZ901 200v 14v 8a 8a 125w -55 to 150c 150c rc/w ... . quality semi-conductors
buz900 BUZ901 static characteristics (tcase = 25c unless otherwise stated) characteristic bvdsx drain - source breakdown voltage bvgss gate - source breakdown voltage \/gs(off) gate - source cut-off voltage ^ds(sat)* drain - source saturation voltage idsx drain - source cut-off current yfs* forward transfer admittance test conditions vgs = -10v buz900 id = 10ma rBUZ901 vds = 0 ig = 100^a vds = 10v id = 100ma vgd-o id = 8a i vds= 160v i buz900 vgs = -10v i gs i vds = 200v BUZ901 vds = 10v lo = 3a min. typ. max. 160 200 ' 14 otis 1,5""" ' 12 10 ! . 10 0.7 " ' 2 unit v v v v ma s dynamic characteristics (tcase = 25c unless otherwise stated) characteristic cjss input capacitance coss output capacitance crss reverse transfer capacitance ton turn-on time toff turn-off time test conditions vr^o - 1 0v f=1mhz vds = 20v id = 5a min. typ. max. 500 300 10 100 ! """so" unit pf ns * pulse test: pulse width = 300^3 , duty cycle < 2%. 125 100 derating chart 25 50 75 100 tc ? case temperature ( c) 125 150
|
